Progress in Si IGBT Technology – as an ongoing Competition with WBG Power Devices

Starting from state of the art silicon Insulated Gate Bipolar Transistors (IGBT) and its underlying device concepts, an outlook on next IGBT development steps is given resulting most likely in ongoing significant power density and efficiency increase. So Si IGBT technology will still play an important role also for the next years - despite the advantages of the upcoming wide band gap switches.