Comparison of TiSi2 , CoSi2, and NiSi for Thin‐Film Silicon‐on‐Insulator Applications

, and NiSi self‐aligned silicide processes have been studied, compared, and applied to thin‐film silicon‐on‐insulator technology. Compared to and NiSi have the advantages of wider process temperature window, no significant doping retarded reaction, narrow runner degradation, and thin‐film degradation. Therefore, they are more suitable for thin‐film silicon‐on‐insulator technology. N‐type field effect transistors have been fabricated in a complementary metal oxide‐semiconductor compatible thin‐film silicon‐on‐insulator technology with titanium, cobalt, and nickel self‐aligned silicide processes for low‐voltage, low‐power microwave applications. The initial thicknesses of titanium, cobalt, and nickel are 30, 13, and 25 nm, respectively. The gate sheet resistances are 6.2, 4.4, and 2.9 Ω/□, respectively, and the total source/drain series resistances are 700, 290, and 550 Ω μm, respectively. High‐frequency measurement results are also presented.