材料科学
等离子体
波长
激光器
扫描电子显微镜
芯(光纤)
辐照
形态学(生物学)
Crystal(编程语言)
电子显微镜
光学显微镜
光学
复合材料
分子物理学
光电子学
化学
量子力学
生物
计算机科学
物理
核物理学
遗传学
程序设计语言
作者
Guohang Hu,Yuanan Zhao,Dawei Li,Qiling Xiao
标识
DOI:10.1088/0256-307x/29/3/037801
摘要
Wet etch process is applied to expose the bulk damage sites in KDP crystals to the surface for the examination by scanning electron microscopy (SEM) and optical microscopy. The damage sites induced by 1064 nm laser consist of three distinct regions: a core, an outer region of modified material, and some oriented cracks. Laser irradiated with 355 nm results in an increase of damage density, a decrease of core diameter and, rarely, occurrence of the crack. Wavelength dependence of the damage feature suggests that a repulsive force exists among the adjacent plasmas, which prevents further expansion of plasma and decreases the size of plasma. The deposited energy absorbed by the smaller plasma may not be able to generate the crack.
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