材料科学
碳化硅
硅
碳化物
化学工程
粒径
碳纤维
纳米晶硅
产量(工程)
冶金
晶体硅
复合材料
复合数
非晶硅
工程类
作者
Y. M. Wang,Xifeng Hou,Wenjia Xu,Mingzhen Tian
标识
DOI:10.1179/1432891714z.0000000001306
摘要
High purity silicon carbide powder for growing semi-insulating silicon carbide single crystal was synthesised using high purity carbon and silicon powder. The effects of reaction temperature on the phase composition, particle size and the production yield were discussed. The results showed that with increasing the reaction temperature, the phase transition from β-silicon carbide to α-silicon carbide was found. Moreover, the particle size and the production yield were first increased with raising the reaction temperature and then decreased when the temperature was higher. The results of glow discharge mass spectroscopy indicated that the synthesised silicon carbide powder can meet the requirements for semi-insulating silicon carbide single crystal growth. Finally, the semi-insulating 4H-SiC single crystals were grown using silicon carbide powder which was synthesised in our laboratory.
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