沟槽
转换器
降压式变换器
电阻器
缓冲器
稳健性(进化)
响铃
功率MOSFET
材料科学
电子工程
MOSFET
逻辑门
电气工程
计算机科学
工程类
电容器
电压
晶体管
生物化学
化学
滤波器(信号处理)
图层(电子)
复合材料
基因
作者
J. Roig,D. Lee,F. Bauwens,Bhavani Burra,Ali Rinaldi,Jason McDonald,B. Desoete
出处
期刊:European Conference on Power Electronics and Applications
日期:2011-09-15
卷期号:: 1-9
被引量:7
摘要
In this work a comparative analysis between different trench-based power MOSFETs is performed to optimize the efficiency and the robustness of 48V-input synchronous buck converters. Hence, gate-trench (GT), gate-drift-trench (GDT) and split-gate (SG) trench structures are investigated by measurements and mixed-mode simulations to determine their suitability at different load currents and frequencies. Moreover, in order to reduce the ringing effects, a co-integrated resistor is proposed to optimize the inherent RC snubber branch in a SG based solution.
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