光电探测器
暗电流
光电子学
响应度
物理
分析化学(期刊)
化学
色谱法
作者
Yaxuan Liu,Lulu Du,Guangda Liang,Wenxiang Mu,Zhitai Jia,Mingsheng Xu,Qian Xin,Xutang Tao,Aimin Song
标识
DOI:10.1109/led.2018.2872017
摘要
A high-performancesolar-blind photodetector based on Cr-doped gallium oxide (Ga 2 O 3 ) has been fabricated. A 140-nm-thick Ga 2 O 3 layer was mechanically exfoliated from bulk crystal. The photodetector was based on a field-effect transistor structure, which showed a very high photo-to-dark current ratio larger than 106 and excellent current saturation. When the photodetector was tested with a 254-nm ultra-violet light, the ratio of drain current with and without the UV light reached nearly six orders of magnitude. The dark current was as low as 5 pA. Furthermore, the current rise time and decay time were both about 25 ms. High responsivity of 4.79 × 10 5 A/W and external quantum efficiency of 2.34 × 10 6 also have been achieved at the same time.
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