异质结
材料科学
化学气相沉积
外延
光电子学
光致发光
单层
蓝宝石
基质(水族馆)
半导体
纳米技术
光学
激光器
图层(电子)
物理
地质学
海洋学
作者
Yu Zhang,Lei Yin,Junwei Chu,Tofik Ahmed Shifa,Jing Xia,Feng Wang,Yao Wen,Xueying Zhan,Zhenxing Wang,Jun He
标识
DOI:10.1002/adma.201803665
摘要
2D metal-semiconductor heterostructures based on transition metal dichalcogenides (TMDs) are considered as intriguing building blocks for various fields, such as contact engineering and high-frequency devices. Although, a series of p-n junctions utilizing semiconducting TMDs have been constructed hitherto, the realization of such a scheme using 2D metallic analogs has not been reported. Here, the synthesis of uniform monolayer metallic NbS2 on sapphire substrate with domain size reaching to a millimeter scale via a facile chemical vapor deposition (CVD) route is demonstrated. More importantly, the epitaxial growth of NbS2 -WS2 lateral metal-semiconductor heterostructures via a "two-step" CVD method is realized. Both the lateral and vertical NbS2 -WS2 heterostructures are achieved here. Transmission electron microscopy studies reveal a clear chemical modulation with distinct interfaces. Raman and photoluminescence maps confirm the precisely controlled spatial modulation of the as-grown NbS2 -WS2 heterostructures. The existence of the NbS2 -WS2 heterostructures is further manifested by electrical transport measurements. This work broadens the horizon of the in situ synthesis of TMD-based heterostructures and enlightens the possibility of applications based on 2D metal-semiconductor heterostructures.
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