Next-generation performance of SAPHIRA HgCdTe APDs

We present the measured characteristics of the most recent iteration of SAPHIRA HgCdTe APD arrays, and with suppressed glow show them to be capable of a baseline dark current of 0:03e^-/s. Under high bias voltages the device also reaches avalanche gains greater than 500. The application of a high temperature anneal during production shows great improvements to cosmetic performance and moves the SAPHIRA much closer to being science grade arrays. We also discuss investigations into photon counting and ongoing telescope deployments of the SAPHIRA with UH-IfA.