光致发光
量子点
钙钛矿(结构)
量子产额
卤化物
材料科学
铋
纳米晶
半最大全宽
锡
光电子学
纳米技术
化学
无机化学
光学
结晶学
物理
荧光
冶金
作者
Meiying Leng,Zhengwu Chen,Ying Yang,Zha Li,Kai Zeng,Kanghua Li,Guangda Niu,Yisu He,Qingchao Zhou,Jiang Tang
标识
DOI:10.1002/anie.201608160
摘要
Abstract Lead halide perovskite quantum dots (QDs) are promising candidates for future lighting applications, due to their high quantum yield, narrow full width at half maximum (FWHM), and wide color gamut. However, the toxicity of lead represents a potential obstacle to their utilization. Although tin(II) has been used to replace lead in films and QDs, the high intrinsic defect density and oxidation vulnerability typically leads to unsatisfactory material properties. Bismuth, with much lower toxicity than lead, is promising to constitute lead‐free perovskite materials because Bi 3+ is isoelectronic to Pb 2+ and more stable than Sn 2+ . Herein we report, for the first time, the synthesis and optical characterization of MA 3 Bi 2 Br 9 perovskite QDs with photoluminescence quantum yield (PLQY) up to 12 %, which is much higher than Sn‐based perovskite nanocrystals. Furthermore, the photoluminescence (PL) peaks of MA 3 Bi 2 X 9 QDs could be easily tuned from 360 to 540 nm through anion exchange.
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