日耳曼
硅烯
石墨烯
凝聚态物理
材料科学
异质结
Dirac(视频压缩格式)
物理
纳米技术
量子力学
中微子
作者
Yangyang Wang,Zeyuan Ni,Qihang Liu,Ruge Quhe,Jiaxin Zheng,Meng Ye,Dapeng Yu,Junjie Shi,Jinbo Yang,Ju Li,Jing Lu
出处
期刊:Bulletin of the American Physical Society
日期:2015-03-03
卷期号:2015
被引量:92
摘要
It is an ongoing pursuit to use metal as a channel material in a field effect transistor. All metallic transistor can be fabricated from pristine semimetallic Dirac materials (such as graphene, silicene, and germanene), but the on/off current ratio is very low. In a vertical heterostructure composed by two Dirac materials, the Dirac cones of the two materials survive the weak interlayer van der Waals interaction based on density functional theory method, and electron transport from the Dirac cone of one material to the one of the other material is therefore forbidden without assistance of phonon because of momentum mismatch. First-principles quantum transport simulations of the all-metallic vertical Dirac material heterostructure devices confirm the existence of a transport gap of over 0.4 eV, accompanied by a switching ratio of over 104. Such a striking behavior is robust against the relative rotation between the two Dirac materials and can be extended to twisted bilayer graphene. Therefore, all-metallic junction can be a semiconductor and novel avenue is opened up for Dirac material vertical structures in high-performance devices without opening their band gaps.
科研通智能强力驱动
Strongly Powered by AbleSci AI