极紫外光刻
极端紫外线
GSM演进的增强数据速率
抵抗
计算机科学
纳米光刻
平版印刷术
材料科学
光电子学
纳米技术
光学
电信
物理
激光器
制作
病理
医学
替代医学
图层(电子)
作者
Mahesh Chandramouli,Bin Liu,Zachary Alberti,Frank E. Abboud,G. Hochleitner,Witold Wroczewski,Stefan Kühn,Christof Klein,Elmar Platzgummer
摘要
Multibeam mask writers (MBMW) from IMS Nanofabrication developed in the last decade are currently being used for leading edge mask patterning. The ability to utilize low sensitivity resists required to pattern complex mask patterns with good edge placement control made MBMW the tool of choice for leading edge extreme ultraviolet (EUV) mask patterning. The next generation of High-NA EUV masks will require smaller features, more complex figures and reduction of edge placement errors. These requirements may exceed the capability of the current MBMW tools. Recently IMS announced the next generation MBMW tools to address this challenge. This paper will explore the effectiveness of the proposed improvements on addressing High-NA EUV mask patterning challenges.
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