凝聚态物理
自旋电子学
自旋(空气动力学)
物理
Berry连接和曲率
自旋霍尔效应
纹理(宇宙学)
电子
超晶格
拓扑(电路)
自旋极化
量子力学
几何相位
铁磁性
数学
组合数学
热力学
人工智能
计算机科学
图像(数学)
作者
Sonali Kakkar,Chandan Bera
标识
DOI:10.1002/apxr.202200026
摘要
Abstract Oxide heterointerfaces are gaining popularity for a variety of applications because of a wide range of emergent quantum phenomena. The creation of a highly conducting and spin‐polarized 2D electron gas (2DEG) with anomalous Hall effect at the EuO–KTaO 3 (KTO) interface is reported by Zhang et al. ( Phys. Rev. Lett . (2018), 121, 116803). The spin‐polarized 2DEG at the interface in EuO/KTO superlattice with a comprehensive electronic structure calculation using density functional theory (DFT) is investigated. It is shown that the magnetic ordering at the interface is related to the occupation of d xy orbitals of interfacial Ta. The band‐crossing points between the majority and minority spin states open a gap when spin–orbit coupling (SOC) is turned on. The large spikes of the Berry curvature Ω( k ) at the momenta of spin–orbit (SO) gaps and integral Chern number demonstrate the non‐trivial band topology. As the system remains metallic, it can display quantum anomalous Hall (QAH) insulating characteristics possibly via strain engineering. The spin texture of the bands with the SO gap on constant energy contour displays single spin winding of electron spin with opposite chirality. The magnetic easy axis is perpendicular to the interfacial plane. Hence, our findings suggest that EuO/KTO system has potential in low‐power quantum electronics, spintronics, and spin‐orbitronics.
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