钙钛矿(结构)
表面改性
光电子学
量子效率
钝化
二极管
三乙氧基硅烷
材料科学
发光二极管
佩多:嘘
铟
电极
图层(电子)
化学工程
纳米技术
化学
复合材料
物理化学
工程类
作者
Dan Chen,Haihua Li,Muxue Zeng,Ganshuai Zhang,Junjie Wang,Danyang Li,Rui Zhong,Jian Wang,Junbiao Peng
标识
DOI:10.1016/j.orgel.2023.106842
摘要
A bifacial modification technique has been developed to improve the device performance of the perovskite light-emitting diodes (PeLEDs). For the bottom modification, to reduce the acidity of the hole injection layer (HIL) poly(3,4-ethyl-enedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS), environmental-friendly L- (+)-Arginine (Arg) is added to alleviate the erosion of indium in ITO electrode. As the result, the peak current efficiency (CE) is enhanced from 6.1 to 16.3 cd A−1, and the maximum external quantum efficiency (EQE) goes from 1.7% to 4.4%. For the top modification, (3-Aminopropyl)triethoxysilane (APTES) is introduced to passivate the surface defects of the perovskite film by coordinating with Pb2+ and suppressing the creation of metallic Pb atoms. With additional APTES on top, the peak CE reaches 31.8 cd A−1, and the maximum EQE reaches 7.7%.
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