Low-Frequency Noise Related to the Scattering Effect in p-Type Copper(I) Oxide Thin-Film Transistors

In this study, we investigate the origins of low-frequency noise (LFN) and 1/f noise in Cu2O thin-film transistors (TFTs). The static direct current (DC) I–V characterization demonstrates that the channel resistance (Rch) contributes significantly to mobility degradation in the TFTs, with channel thickness (tch) controlled through the plasma-enhanced atomic layer deposition (PEALD) process. The 1/f noise followed the Hooge mobility fluctuation (HMF) model, and it was observed that both Coulomb and phonon scattering within the channel, which increased with a decrease in tch, contributed simultaneously. Increased Rch contributed more significantly to the 1/f noise than to the contact resistance (RC), as evidenced by the RC configuration of the measurements, which also revealed that RC depends upon tch. This study demonstrates that tch is a major noise source in Cu2O TFTs and presents guidelines for the development of Cu2O TFTs and potential high-mobility p-type oxide semiconductors.