Direct Quantitative Extraction of Internal Variables from Measured PUND Characteristics Providing New Key Insights into Physics and Performance of Silicon and Oxide Channel Ferroelectric FETs

We propose a new approach where internal distributed variables of ferroelectric FETs (FEFET) are directly extracted from measured positive-up negative-down (PUND) FEFET and ferroelectric capacitor (FECAP) P-V data. Quantitative energy band diagrams (EBDs) reveal the detailed device physics by providing internal device quantities including potential, polarization, carrier density, and defect density in energy and real space at each external bias point. The insights into internal device quantities shed light onto the intricate symbiosis between polarization switching and charge emission/capture, stress induced memory window closure due to permanently trapped charge and/or interface/channel defect generation; and phenomena including read delay after write, polarization switching, and polarization walkout/snapback. The new key findings provide a path into possible solutions of performance and lifetime limitations of both Si and oxide channel FEFETs.