光催化
异质结
制氢
材料科学
X射线光电子能谱
氢
表面光电压
漫反射
扫描电子显微镜
微观结构
透射电子显微镜
化学工程
兴奋剂
半导体
分析化学(期刊)
光谱学
纳米技术
光电子学
化学
催化作用
复合材料
有机化学
光学
物理
量子力学
工程类
作者
Ruolin Chen,Hongmiao Zhou,Changcun Han,Pan Wang,Ruoyu Wang,Zhifeng Liu,Xinguo Ma,Yizhong Huang
标识
DOI:10.1021/acsaem.2c02525
摘要
The ZnIn 2 S 4 (ZIS) powder that was synthesized by the hydrothermal method has excellent photocatalytic H 2 evolution activity. Cu 3 P (CP) is a p-type semiconductor, often associated with an n-type catalyst to form a p–n junction by balancing the diffusion of the carrier with the electrical migration. Therefore, it is well suited as a photocatalytic cocatalyst. To further improve the hydrogen production activity of the semiconductor photocatalyst, the Cu 3 P/ZnIn 2 S 4 (CP/ZIS) samples are obtained through simple mechanical mixing. X-ray photoelectron spectroscopy, X-ray diffraction, surface photovoltage, ultraviolet–visible diffuse reflection light, scanning electron microscopy, and transmission electron microscopy techniques were used to investigate the crystal morphologies, properties, and optical properties of a CP/ZIS photocatalyst. The optical properties, microstructures, and composition of surface elements of the composite have been fully characterized. Experiments found that the mixed sample absorbed a wider light range and had a better hydrogen production rate compared to the pure ZnIn 2 S 4 . When the doping content of the supported Cu 3 P cocatalyst is 0.5%, the optimal hydrogen production rate of the sample CP/ZIS is 5466 μmol·g –1 ·h –1, which is 1.7 times that of pure ZnIn 2 S 4 . A heterojunction was formed between ZnIn 2 S 4 and Cu 3 P to favor the migration and separation of carriers, and thus photocatalytic activity on CP/ZIS, facilitating the rate of photocatalytic H 2 production.
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