材料科学
结晶
无定形固体
薄膜
焦耳加热
硅
非晶硅
多晶硅
共晶体系
成核
图层(电子)
电场
分析化学(期刊)
复合材料
晶体硅
光电子学
纳米技术
结晶学
化学工程
微观结构
薄膜晶体管
化学
工程类
有机化学
色谱法
物理
量子力学
作者
Kyongtae Ryu,Jiyoung Park,Seung-Jae Moon
标识
DOI:10.1016/j.mssp.2023.107352
摘要
A rapid aluminum induced crystallization (AIC) method of amorphous silicon (a-Si) thin film was suggested. A constant electrical current is supplied to an aluminum (Al) layer deposited on the a-Si thin film and anneals the Al/Si stack fast by Joule-heating. The Joule heating is presumed to expedite a-Si thin film crystallization. To investigate the crystallization mechanism, an in-situ temperature and reflectivity measurement was adopted during the process. The maximum crystallization temperature was 744.15 K, which was found to be similar to the typical furnace AIC process temperature and less than the Al/Si eutectic temperature of 850 K. The measured and calculated surface reflectivity demonstrated the rapid Al induced layer exchange behavior between Si and Al layers. The entire process was accomplished for only a few dozens of seconds. This rapid layer exchange is caused by sudden increase of temperature-dependent Al diffusion coefficient in a Si layer and additional electric field enhancement. The Raman peak of 519 cm−1 verified the formation of polycrystalline silicon (p-Si) after the Al etching process. Scanning electron microscopy images showed that the resulting p-Si structure was porous with an average pore size of around 1.2 μm.
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