凝聚态物理
自旋电子学
铁磁性
材料科学
联轴节(管道)
垂直的
磁化
切换时间
磁各向异性
旋转扭矩传递
各向异性能量
磁场
光电子学
物理
量子力学
几何学
数学
冶金
作者
Shiqiang Liu,Caihua Wan,Jiafeng Feng,X. Luo,Ran Zhang,Zhimba Zh. Namsaraev,Xiaohan Li,Fenghua Gao,Maxim E. Stebliy,Alexey V. Ognev,Guoqiang Yu,Alexander S. Samardak,Xiufeng Han
摘要
The T-type CoFeB/spacer/CoFeB structure is a promising candidate for the development of perpendicular spin–orbit torque (SOT) magnetic random-access memory and other SOT devices. It consists of an in-plane magnetized layer, a perpendicularly magnetized layer, and a non-magnetic metal spacer that induces interlayer exchange coupling. By engineering the W spacer, this system achieves field-free SOT switching with a nearly 100% switching ratio. Furthermore, it realizes a high exchange coupling field of 255 Oe using a relatively thinner spacer thickness, enhancing the reliability and energy efficiency of SOT switching. Measurement of current switching probability suggests that this perpendicular magnetic anisotropy system may enable the implementation of probability-adjustable true random number generators in future applications. The T-type structures with strong interlayer coupling exhibit great potential for spintronic device applications.
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