材料科学
薄膜晶体管
半导体
光电子学
晶体管
氧化物
工程物理
纳米技术
电气工程
物理
工程类
图层(电子)
冶金
电压
作者
Guowen Yan,Dejian Wang,Xiaoqi Sun,Pan Wen,Cong Peng,Lin Xu,Liang Ding,Fa-Hsyang Chen,Xifeng Li,Wangfeng Xi,Rubo Xing,Junfeng Li
摘要
This paper presents a oxide thin film transistors with high mobility by a new fabricate method. The high mobility TFT with ultra‐high mobility of 55cm 2 /Vs has been obtained, and the PBTS and NBTS has also been optimized.
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