光探测
响应度
光电子学
量子点
材料科学
波长
硫系化合物
红外线的
光电探测器
纳米材料
紫外线
光学
纳米技术
物理
作者
Xiaomeng Xue,Qun Hao,Menglu Chen
标识
DOI:10.1038/s41377-024-01436-y
摘要
Abstract Colloidal quantum dots (CQDs) are of interest for optoelectronic devices because of the possibility of high-throughput solution processing and the wide energy gap tunability from ultraviolet to infrared wavelengths. People may question about the upper limit on the CQD wavelength region. To date, although the CQD absorption already reaches terahertz, the practical photodetection wavelength is limited within mid-wave infrared. To figure out challenges on CQD photoresponse in longer wavelength, would reveal the ultimate property on these nanomaterials. What’s more, it motivates interest in bottom-up infrared photodetection with less than 10% cost compared with epitaxial growth semiconductor bulk. In this work, developing a re-growth method and ionic doping modification, we demonstrate photodetection up to 18 μm wavelength on HgTe CQD. At liquid nitrogen temperature, the responsivity reaches 0.3 A/W and 0.13 A/W, with specific detectivity 6.6 × 10 8 Jones and 2.3 × 10 9 Jones for 18 μm and 10 μm CQD photoconductors, respectively. This work is a step toward answering the general question on the CQD photodetection wavelength limitation.
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