空位缺陷
材料科学
电化学
兴奋剂
吸附
电极
超级电容器
热液循环
电容
化学工程
比表面积
分析化学(期刊)
纳米技术
化学
物理化学
结晶学
光电子学
色谱法
工程类
生物化学
催化作用
作者
Xing Chen,Haiyan Tao,Yinhua Jiang,Shishi Li,Yuxin Liu,Kun Xie,Yuqiao Wang
标识
DOI:10.1016/j.est.2023.107721
摘要
P-doped S vacancy-rich NiCo2S4 hollow microspheres (P-NiCo2S4-x HMSs) were prepared by hydrothermal, sulfuration, and phosphorization methods. P doping and S vacancy dual defects can be simultaneously obtained during the phosphorization process. The dual defects can modulate the electron structure and create abundant electrochemical sites, boosting electron transfer and reaction kinetics. Theoretical calculations illustrated that the dual defects could reduce the adsorption energy of OH− and Mulliken charges of Ni atoms, in favor of OH− adsorption. The hollow construction can increase the specific surface area, promote ion diffusion, and alleviate the volume variation during charge/discharge processes. The specific capacity and rate capability of the P-NiCo2S4-x HMSs electrode can reach up to 1146.0 C g−1 at 1 A g−1 and 61.8 % at 30 A g−1, respectively. The P-NiCo2S4-x HMSs electrode exhibited remarkable cycling stability with a 79.5 % capacity retention after 20,000 consecutive charge/discharge cycles. The assembled P-NiCo2S4-x//AC hybrid supercapacitor manifested an infusive energy density of 62.7 Wh kg−1 at 867 W kg−1.
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