1380 V β-Ga2O3 trench MIS-type Schottky barrier diode with ultra-low leakage current

Abstract A β-Ga2O3 trench Schottky barrier diode (T-SBD) with double-field-plates terminal and cost effective Al2O3/SiN dielectric layer is fabricated. Owing to the shielding effect of trench MIS (Metal-Insulator-Semiconductor) structure, compared with Conventional SBD (C-SBD), breakdown voltage (BV) of T-SBD is improved from 700 V (C-SBD) to 1380 V (TSBD) with specific on-resistance (Ron,sp) being 6.06 mΩ·cm2. Compared to C-SBD, Baliga’s Figure of Merit for the T-SBD is improved from 131 MW/cm2 (C-SBD) to 314 MW/cm2 (T-SBD). Moreover, the leakage current of T-SBD is significantly reduced from ~0.33 mA/cm2 (C-SBD) to ~38 μA/cm2 (T-SBD).