潘宁电离
介质阻挡放电
沉积(地质)
电离
氧气
等离子体
氩
电介质
材料科学
分析化学(期刊)
激发态
等离子体处理
化学工程
化学
化学物理
原子物理学
离子
环境化学
光电子学
有机化学
工程类
古生物学
物理
生物
量子力学
沉积物
作者
Jiaxin Chang,Dong Dai,Cheng Zhang,Tao Shao
标识
DOI:10.1002/ppap.202300172
摘要
Abstract Atmospheric dielectric barrier discharge (DBD) is a promising approach for large‐area deposition, whose spatiotemporal evolution determines the deposition rate and film chemistry. To investigate the relationship between the discharge and deposition behavior of tetraethoxysilane/oxygen/argon (TEOS//Ar) DBD, a one‐dimensional (1D) fluid model was constructed and experimentally verified. The calculation results reveal that TEOS mainly affects the discharge behavior via Penning ionization, while mainly affects discharge via attachment reaction. Penning ionization reduces the excited Ar and the attachment reaction reduces the number of discharges in half voltage cycles. As a result, merely increasing the concentration of TEOS or may not proportionally increase the deposition rate of relevant reactive species.
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