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Potassium doping of sputtered MoS2 films by CVD method

退火(玻璃) 兴奋剂 摩尔浓度 材料科学 带隙 分析化学(期刊) 停留时间 溅射沉积 蓝移 薄膜 溅射 纳米技术 光电子学 光致发光 冶金 化学 色谱法 医学 临床心理学 有机化学
作者
Ali Altuntepe,Serkan Erkan,M.A. Olğar,Güldöne Toplu,Recep Zan
出处
期刊:Journal of Materials Science: Materials in Electronics [Springer Nature]
卷期号:35 (1)
标识
DOI:10.1007/s10854-023-11802-y
摘要

Abstract Doping is an essential approach to enhance the electrical properties of 2D materials. In the present study, two-stage process was used to obtain potassium-doped (K-doped) MoS 2 . The MoS 2 films were grown by magnetron sputtering technique and followed by doping process employing CVD method. The influence of KOH molarity and annealing time on the structural properties of the MoS 2 films was investigated thoroughly. 0.2–0.8-M KOH was used to obtain K-doped MoS 2 . The increase in the molarity of KOH caused a shift in the optical band gap from 1.98 to 1.81 eV. It was observed that increasing the KOH molarity resulted in the loss of homogeneity in the MoS 2 films, the use of 0.2-M KOH for the growth of K-doped MoS 2 exhibited the most promising results according to performed analyzes. In addition, annealing time also played a critical role in the growth of K-doped MoS 2 . The dwell times of 5, 10, and 15 min were also used and the effect of molarity and dwell times was investigated. The optical band gap was also shifted from 1.9 to 1.71 eV with increasing the dwell time of KOH. Longer annealing times resulted in the deterioration of the MoS 2 film structure. Consequently, an annealing time of 5 min was found to be the optimum value for the growth of K-doped MoS 2 film. Overall, this study demonstrates that successful growth of high-quality and homogeneous K-doped MoS 2 films which can be employed for various optoelectronic applications.

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