Intrinsic magnetism of an individual rare-earth atom on transition metal dichalcogenide semiconductors

Two-dimensional (2D) structures that exhibit intriguing magnetic phenomena such as perpendicular magnetocrystalline anisotropy (PMA) have become a focus of spintronic research due to their potentials in maximizing the information storage density. Herein we perform density-functional theory plus U (DFT+U) calculations to investigate the binding affinity and intrinsic magnetic properties of an individual rare-earth (RE) Sm atom on WSe2 monolayer. Our calculations show that Sm adatom energetically prefers to adsorb at the W-top site in WSe2 rather than the Se-top and hollow sites. We predict extremely large PMA values of ∼7–33 meV per Sm at the most stable W-top site, depending on U parameter in DFT+U calculations, while it is negligibly small for the Se-top and hollow sites. The underlying mechanism for large PMA is elucidated in terms of the strong spin–orbit coupled Sm 4f – W 5d orbital states and large 4f orbital magnetic moment in the high-spin crystal field. These results provide a viable route to achieving an atomic scale f-electron PMA in 2D structures, opening interesting prospects in two-dimensional semiconducting spintronics.