神经形态工程学
铁电性
材料科学
光电子学
晶体管
场效应晶体管
领域(数学)
电气工程
工程物理
人工神经网络
计算机科学
工程类
电压
人工智能
电介质
数学
纯数学
作者
Woochan Chung,Doohyung Kim,J. Kim,Jongmin Park,Sungjun Kim,Sejoon Lee
标识
DOI:10.1016/j.jmst.2024.06.058
摘要
To present an advanced device scheme of high-performance optoelectronic synapses, herein, we demonstrated the electrically- and/or optically-drivable multifaceted synaptic capabilities on the 2D semiconductor channel-based ferroelectric field-effect transistor (FeFET) architecture. The device was fabricated in the form of the MoS2/PZT FeFET, and its synaptic weights were effectively controlled by dual stimuli (i.e., both electrical and optical pulses simultaneously) as well as single stimuli (i.e., either electrical or optical pulses alone). This could be attributed to the electrical pulse-tunable strong ferroelectric polarization in PbZrxTi1−xO3 (PZT) as well as the polarization field-enhanced persistent photoconductivity effect in MoS2. Additionally, it was confirmed that the proposed device possesses substantial activity, achieving approximately 95% pattern recognition accuracy. The results substantiate the great potential of the 2D semiconductor channel-based FeFET device as a high-performance optoelectronic synaptic platform, marking a pivotal stride towards the realization of advanced neuromorphic computing systems.
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