AFORS-HET-based numerical exploration of tunnel oxide passivated contact solar cells incorporating n- and p-type silicon substrates

The development of a tunnel oxide interfacial layer capped by a highly doped poly-Si layer is considered one of the most promising methods to reduce charge carrier recombination and improve the performance of conventional PERC devices. The thickness and doping concentration of emitters and BSF layers greatly influence the tunnelling current in TOPCon devices. In this research, we evaluated the performance of tunnel oxide passivated contact (TOPCon) solar cells by conducting an in-depth analysis of various key parameters. The parameter include the type of silicon substrate (n or p-type); the thickness and doping density (