材料科学
三碘化物
锑
光伏系统
金属
光电子学
纳米技术
冶金
色素敏化染料
电气工程
电极
物理化学
化学
电解质
工程类
作者
Shengyang Xing,Shuxin Chen,Sixue Fang,Fuyu Tian,Zonglun Li,Xilian Jin,Quanjun Li,Bingbing Liu
标识
DOI:10.1002/adom.202401433
摘要
Abstract The effective modification of photovoltaic activities in photoelectric devices is significant for enhancing energy conversion efficiency. Here, the pressure‐tunable photovoltaic properties in the SbI 3 device with Au/Pt asymmetric electrodes are demonstrated. At initial pressure, the SbI 3 device exhibits an anticipated self‐driven photoresponse characteristic at zero external bias, and a significant enhancement in photocurrent response is observed with increasing bias to −0.2 V, nearly two orders of magnitude higher than the initial value. With increasing pressure, the SbI 3 device exhibits tunable photocurrent response, reaching a maximum value at ≈1.2 GPa, while the photovoltage response decreases monotonously during compression, which is closely associated with the dynamic evolution of the work function and bandgap of SbI 3 upon successive compression. These findings signify that SbI 3 is a promising candidate for future photoelectric devices, which opens a new window of opportunity for further exploration, regulation, and understanding of high‐performance photovoltaic devices under extreme conditions.
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