计算机科学
灵活性(工程)
人工神经网络
氮化镓
自编码
半导体器件制造
自动化
半导体器件
半导体器件建模
电子工程
人工智能
计算机工程
机器学习
工程类
电气工程
机械工程
材料科学
CMOS芯片
纳米技术
图层(电子)
统计
薄脆饼
数学
作者
Zeheng Wang,Liang Li,Ross C. C. Leon,Jinlin Yang,Junjie Shi,Timothy van der Laan,Muhammad Usman
标识
DOI:10.1109/ted.2023.3307051
摘要
The semiconductors industry benefits greatly from the integration of machine learning (ML)-based techniques in technology computer-aided design (TCAD) methods. The performance of ML models, however, relies heavily on the quality and quantity of training datasets. They can be particularly difficult to obtain in the semiconductor industry due to the complexity and expense of the device fabrication. In this article, we propose a self-augmentation strategy for improving ML-based device modeling using variational autoencoder (VAE)-based techniques. These techniques require a small number of experimental data points and do not rely on TCAD tools. To demonstrate the effectiveness of our approach, we apply it to a deep neural network (DNN)-based prediction task for the ohmic resistance value in gallium nitride (GaN) devices. A 70% reduction in mean absolute error (MAE) when predicting experimental results is achieved. The inherent flexibility of our approach allows easy adaptation to various tasks, thus making it highly relevant to many applications of the semiconductor industry.
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