声子拖拽
凝聚态物理
阻力
声子
材料科学
硅
纳米结构
兴奋剂
热电效应
塞贝克系数
薄膜
纳米尺度
电子
阻力系数
纳米技术
物理
机械
热导率
光电子学
量子力学
复合材料
作者
Raja Sen,Nathalie Vast,Jelena Sjakste
出处
期刊:Physical review
日期:2023-08-16
卷期号:108 (6)
被引量:4
标识
DOI:10.1103/physrevb.108.l060301
摘要
It is commonly believed that phonon drag, a phenomenon where electrons are dragged from the hot to the cold side of the sample by out-of-equilibrium phonons, does not play any significant role on the nanoscale. Here, the authors show that, even if the phonon-drag contribution is strongly reduced by nanostructuring, a silicon thin film of 100 nm thickness can still preserve more than 20% of the bulk phonon-drag contribution at 300 K along the in-plane direction of the thin film.
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