Dynamic On-Resistance Characterization of GaN Power HEMTs Under Forward/Reverse Conduction Using Multigroup Double Pulse Test

热传导 材料科学 晶体管 光电子学 肖特基二极管 逆向工程 计算机科学 电气工程 电压 工程类 二极管 复合材料 程序设计语言
作者
Zonglun Xie,Xinke Wu,Zezheng Dong,Jiahui Sun,Kuang Sheng,Kevin J. Chen
出处
期刊:IEEE Transactions on Power Electronics [Institute of Electrical and Electronics Engineers]
卷期号:39 (2): 1963-1967 被引量:1
标识
DOI:10.1109/tpel.2023.3331891
摘要

In bridgeless power factor correction converters and inverters, GaN high-electron-mobility transistors (HEMTs) operate in both forward and reverse conduction modes, which may feature different dynamic on -resistance ( R ON ) behaviors. Despite the extensive study of dynamic R ON under forward conduction, dynamic R ON under reverse conduction still demands comprehensive evaluation. In this letter, the dynamic R ON of two commercial p-GaN gate HEMTs with different technologies under forward/reverse conduction and hard/soft switching is characterized using the custom-designed multigroup double pulse test system, which nearly eliminates the accumulated self-heating effect in the device. First, the test was conducted at off -state bias voltage = 400 V, I DS = 70% I DS(max) . For the Schottky-type p -GaN gate HEMTs, the dynamic R ON in reverse conduction is found to be more than 3%–5% higher compared to the forward conduction. However, for the hybrid-drain-embedded gate injection transistor, operating in reverse conduction mode leads to a slighter dynamic R ON degradation effect, with a reduction of approximately 10% compared to the forward conduction. Next, I DS was modulated to evaluate its impact on dynamic R ON . For both devices, during reverse conduction it was observed that the dynamic R ON initially decreases and subsequently increases with the I DS increase.
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