Repairable Polymer Solid Electrolyte Gated MoS 2 Field Effect Devices with Large Radiation Tolerance

Abstract As human activities expand into naturally or man‐made radiation‐prone environment, the need for radiation‐hardened (Rad‐Hard) electronic hardware surges. The state‐of‐the‐art silicon‐based and 2D materials‐based Rad‐Hard transistors can withstand up to 1 Mrad (Si) of total ionization dose (TID), while higher TID tolerance is being heatedly sought after. Here, few‐layer MoS 2 Rad‐Hard field‐effect transistors (FETs) with polymer solid electrolyte (PSE) gate dielectrics are presented. The MoS 2 PSE‐FETs exhibit a TID tolerance of up to 3.75 Mrad (Si) at a dose rate of 523 rad (Si) s −1 and can be repaired with a moderate thermal annealing at 100 °C for 5 min. Combining the excellent intrinsic radiation tolerance and the reparability, the MoS 2 PSE‐FETs reach a TID tolerance of up to 10 Mrad (Si). Complementary metal–oxide–semiconductor‐like MoS 2 PSE‐inverters are built and show high radiation tolerance as well. Furthermore, the feasibility of wafer‐scale Rad‐Hard PSE‐inverter array is demonstrated using chemical vapor deposition grown monolayer MoS 2 . These studies uncover the potential of 2D materials‐based PSE devices in future Rad‐Hard integrated circuits.