High‐Performance CsPb1−xSnxBr3 Perovskite Quantum Dots for Light‐Emitting Diodes

Abstract All inorganic CsPbBr 3 perovskite quantum dots (QDs) are potential emitters for electroluminescent displays. We have developed a facile hot‐injection method to partially replace the toxic Pb 2+ with highly stable Sn 4+ . Meanwhile, the absolute photoluminescence quantum yield of CsPb 1− x Sn x Br 3 increased from 45 % to 83 % with Sn IV substitution. The transient absorption (TA) exciton dynamics in undoped CsPbBr 3 and CsPb 0.67 Sn 0.33 Br 3 QDs at various excitation fluences were determined by femtosecond transient absorption, time‐resolved photoluminescence, and single‐dot spectroscopy, providing clear evidence for the suppression of trion generation by Sn doping. These highly luminescent CsPb 0.67 Sn 0.33 Br 3 QDs emit at 517 nm. A device based on these QDs exhibited a luminance of 12 500 cd m −2 , a current efficiency of 11.63 cd A −1 , an external quantum efficiency of 4.13 %, a power efficiency of 6.76 lm w −1 , and a low turn‐on voltage of 3.6 V, which are the best values among reported tin‐based perovskite quantum‐dot LEDs.