异质结
光催化
欧姆接触
电子转移
肖特基势垒
电荷(物理)
材料科学
催化作用
电子
载流子
导带
光电子学
化学物理
纳米技术
化学
光化学
物理
二极管
量子力学
生物化学
图层(电子)
作者
Xianghu Wang,Xuehua Wang,Tianyu Shi,Alan Meng,Tongqing Yang,Mengmeng Zhang,Lei Wang,Guicun Li,Jianfeng Huang,Xiaohu Yu,Zhenjiang Li
标识
DOI:10.1021/acscatal.2c04544
摘要
The purposeful regulation of the charge transfer pathway is of great significance for efficient H2 evolution activity. Herein, a ZnIn2S4 (DZIS)-based heterostructure of ZnIn2S4/SnSe2/In2Se3 (DZIS/SnSe2/In2Se3) was fabricated in which the "O-S" charge transfer was realized by constructing an Ohmic-like junction between DZIS and SnSe2, as well as a Schottky-like junction between SnSe2 and In2Se3. The Ohmic-like junction promoted the electrons in DZIS to transfer to SnSe2, whereas the Schottky-like junction accelerated the holes in In2Se3 to transfer to SnSe2. Benefiting from the peculiar "O-S" charge transfer, a large number of highly active photogenerated electrons were resolved in the conduction band of In2Se3, which contributed to the enhancement of H2 production activity. Under visible light irradiation, the optimized DZIS/SnSe2/In2Se3 exhibits a H2 evolution rate of 86.91 mmol·h–1·g–1 and an apparent quantum efficiency of 20.97% at 420 nm. This work reports an advanced prototype for realizing the desired charge transfer route through artificial heterointerface designing in an all-in-one photocatalyst.
科研通智能强力驱动
Strongly Powered by AbleSci AI