Study of photoluminescence behaviors and Judd-Ofelt analysis of Eu3+ doped double perovskite Ba2GdSbO6 phosphor for highly pure and strong red-light generation

An array of Eu3+ doped Ba2GdSbO6 luminescent materials have been synthesized by the conventional solid-state (high temperature) reaction route. Surface morphology has been studied via Field Emission Scanning Electron Microscopy. The structural and optical behaviors have been studied using X-Ray Diffraction (XRD), FTIR, Raman spectroscopy, Diffuse reflectance spectroscopy, Photoluminescence excitation (PLE), and Photoluminescence emission (PL) spectra. FTIR and Raman's spectra provided the chemical functional group and different vibrational levels within the samples. The calculated optical band gap was 4.40 eV and 4.47eV for pure and optimized samples respectively. Photoluminescence emission curves have been recorded for 245 nm of excitation wavelength and the highest emission peak was focused at 595 nm corresponding to 5D0 → 7F1. Similarly, the Photoluminescence excitation curves were monitored at the emission wavelength of 595 nm and a broad charge transfer band (CTB) was observed from 230 to 285 nm. The emission spectra show the concentration quenching effect beyond the 2 mol% Eu3+ concentration. The corresponding transitions of Eu3+ were further utilized to obtain the Judd-Ofelt (J-O) transition intensity parameters Ωλ (λ = 2, 4) for each sample. Additionally, by studying decay kinetics, the average lifetime of the red emission of the samples has been evaluated, which was 4.622 ms. The photometric study also reveals the CIE coordinates, color purity and CCT values of the proposed phosphor material. Thus, the results obtained from these characterizations, suggest that the prepared sample may behave as a potential candidate in the case of UV-excited red light-emitting phosphor material for light-emitting diodes and field emission devices.