铟
镓
主组元素
群(周期表)
三元运算
材料科学
半导体
纳米技术
硫族元素
化学
结晶学
冶金
过渡金属
光电子学
计算机科学
有机化学
催化作用
程序设计语言
作者
Fabrizio Guzzetta,Cameron Jellett,Jalal Azadmanjiri,P. Roy,Saeed Ashtiani,Karel Friess,Zdeněk Sofer
出处
期刊:Small
[Wiley]
日期:2023-01-15
卷期号:19 (12)
标识
DOI:10.1002/smll.202206430
摘要
Abstract The attention on group III‐VI compounds in the last decades has been centered on the optoelectronic properties of indium and gallium chalcogenides. These outstanding properties are leading to novel advancements in terms of fundamental and applied science. One of the advantages of these compounds is to present laminated structures, which can be exfoliated down to monolayers. Despite the large knowledge gathered toward indium and gallium chalcogenides, the family of the group III‐VI compounds embraces several other noncommon compounds formed by the other group III elements. These compounds present various crystal lattices, among which a great deal is offered from layered structures. Studies on aluminium chalcogenides show interesting potential as anodes in batteries and as semiconductors. Thallium (Tl), which is commonly present in the +1 oxidation state, is one of the key components in ternary chalcogenides. However, binary Tl–Q (Q = S, Se, Te) systems and derived films are still studied for their semiconducting and thermoelectric properties. This review aims to summarize the biggest features of these unusual materials and to shed some new light on them with the perspective that in the future, novel studies can revive these compounds in order to give rise to a new generation of technology.
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