A theoretical prediction of thermoelectrical properties for novel two-dimensional monolayer ZrSn2N4
单层
材料科学
工程物理
纳米技术
物理
作者
S. M. Feng,Hangbo Qi,Wenguang Hu,Xiaotao Zu,Haiyan Xiao
出处
期刊：Journal of materials chemistry. A, Materials for energy and sustainability [The Royal Society of Chemistry] 日期：2024-01-01卷期号：12 (22): 13474-13487被引量：1
标识
DOI：10.1039/d4ta00532e
摘要
The optimal ZT values for p-type (n-type) doped ZrSn 2 N 4 can reach a moderate level of 1.15 (0.91) at 1200 K, which demonstrates the great potential of the ZrSn 2 N 4 monolayer as a TE material.
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