荧光粉
发光
发光二极管
激发态
蓝光
热稳定性
二极管
材料科学
分析化学(期刊)
兴奋剂
近红外光谱
物理
化学
光电子学
光学
色谱法
有机化学
核物理学
作者
Fangyi Zhao,Yuhe Shao,Quanlin Liu,Jiasong Zhong
标识
DOI:10.1002/lpor.202400447
摘要
Abstract Near‐infrared (NIR) phosphor‐converted light‐emitting diode (pc‐LED) light sources in the second NIR window (NIR‐II, 1000–1700 nm) have sparked great interest for their emerging applications in non‐destructive detection and medical diagnostics fields. However, the development of efficient NIR‐II phosphors that can be excited by commercial blue LED chips remains a significant challenge, and thus impeding the applications of NIR pc‐LED. Herein, a blue‐light‐excitable broadband NIR‐II luminescence of Ni 2+ is achieved upon incorporating Cr 3+ and Ni 2+ into the Ca 3 Ga 2 Ge 3 O 12 (CGGO) host simultaneously. Through the energy transfer from Cr 3+ to Ni 2+ , CGGO:Cr 3+ ,Ni 2+ phosphor presents the improved NIR‐II emission peaking at 1470 nm under 460 nm blue light excitation. The internal/external quantum efficiency values are significantly improved from 13.8%/3.3% to 24.6%/13.3% along with the enhanced luminescence thermal stability. Finally, a NIR pc‐LED is fabricated by combining CGGO:Cr 3+ ,Ni 2+ phosphor with 450 nm blue chip, and its potential applications in non‐destructive examination and biomedical imaging fields have been demonstrated. The strategy of Cr 3+ and Ni 2+ co‐doping solves the problem that Ni 2+ luminescence cannot be effectively excited by blue light and provides the design insights to exploit more ultra‐broadband NIR pc‐LEDs based on blue LED chips.
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