钝化
卤化物
钙钛矿(结构)
材料科学
无机化学
化学工程
化学
有机化学
纳米技术
图层(电子)
工程类
作者
Zhichun Yang,Jinyan Chen,Mengyu Li,Minru Qi,Guofeng Zhang,Ruiyun Chen,Jianyong Hu,Xinghui Liu,Chengbing Qin,Liantuan Xiao,Suotang Jia
标识
DOI:10.1016/j.cej.2024.152955
摘要
Surface defects-mediated non-radiative charge recombination in polycrystalline perovskite films has been widely acknowledged to be responsible for the undesired open-circuit voltage (VOC) deficit, which is still a great challenge for perovskite solar cells (PSCs) to achieve the Shockley-Queisser efficiency limit. Herein, we report the use of 4-methoxy phenethylammonium halide salts (4-MeO-PEAX, X = I, Br, Cl) on the surface of formamidinium-cesium (FACs) perovskite films for surface passivation. The impact of halogen species in 4-MeO-PEAX on the quality of FACs perovskite films and device performance are comparatively investigated. We find that the prepared FACs perovskite films demonstrate dramatically reduced defect density and surface roughness, improved crystallinity, preferred (0 0 1) orientation and prolonged carrier lifetime after the post-treatment by 4-MeO-PEACl. Consequently, the 4-MeO-PEACl post-processed p-i-n PSCs have achieved a significantly improved power conversion efficiency of 22.63 % and VOC of 1.13 V. The unencapsulated devices post-treated with 4-MeO-PEACl maintained 90 %, 88 % and 84 % of their initial efficiencies, after being thermally stressed at 65 ℃ under dark for 312 h, stored in ambient air for 720 h and operated under continuous 1 sun equivalent illumination with maximum power point tracking at 50 ℃ for 1000 h, respectively.
科研通智能强力驱动
Strongly Powered by AbleSci AI