铁电性
Valleytronics公司
材料科学
联轴节(管道)
光子学
光电子学
极化(电化学)
纳米技术
物理
凝聚态物理
电介质
自旋电子学
铁磁性
物理化学
化学
冶金
作者
Yan‐Fang Zhang,Hao Guo,Yongqian Zhu,Shunuo Song,Xudan Zhang,Wanhao Luo,Yuyang Zhang,Shixuan Du
标识
DOI:10.1002/adfm.202410240
摘要
Abstract 2D ferroelectric materials present promising applications in information storage, sensor technology, and optoelectronics through their coupling with magnetics/valleytronics, mechanics, and optics, respectively. The integration of 2D ferroelectrics with magnetism enhances data storage density in memory devices by enabling electric‐field‐controlled magnetic states. Ferroelectric‐valley coupling holds promise for high‐speed, low‐energy electronics by leveraging the electrical control of valley polarization. Ferroelectric‐strain coupling results in various polar topologies, with potential applications in high‐density data storage technologies and sensor devices. Moreover, the coupling between ferroelectrics and optics facilitates the development of nonlinear photonics based on ferroelectric materials. This review summarizes the latest theoretical progress in the coupling mechanisms, including the Dzyaloshinskii‐Moriya‐interaction‐induced magnetoelectric coupling, symmetry‐linked ferroelectric‐valley coupling, ferroelectric‐strain‐coupling‐generated polar topologies, and second‐harmonic generation through ferroelectric‐light interactions. The current challenges and future opportunities in harnessing the coupling in 2D ferroelectric materials for multifunctional applications are provided.
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