Highly Efficient Deposition of Centimeter‐Scale MoS2 Monolayer Film on Dragontrail Glass with Large Single‐Crystalline Domains

Highly efficient growth of a centimeter-scale MoS2 monolayer film by oxide scale sublimation chemical vapor deposition (OSSCVD) in a time as short as 60 s is reported. Benefiting from the superior catalytic ability of Dragontrail glass (DT-glass) substrate and the controlled large vapor supersaturation of the molybdenum source, the ultrafast deposition of MoS2 is realized with maintaining large-sized single-crystalline domains over 20 µm at maximum in the film. It is comparable to those reported for MoS2 grown in tens of minutes and even hours. Similar to the face-to-face precursor feed route, the gas-controlled OSSCVD with a showerhead configuration facilitates a homogeneous and controllable source supply. It enables high-quality monolayer MoS2 film deposition on 2 × 2 cm2 DT-glass with centimeter-scale uniformity confirmed by microscopic, spectroscopic, and electrical characterizations. Back-gate MoS2 field-effect transistors fabricated on polycrystalline continuous film exhibit the maximum field-effect mobility of 5.1 cm2 V-1 s-1 and a peak Ion /Ioff ratio of 5 × 108 . They reach 40 cm2 V-1 s-1 and 1.2 × 109 , respectively, on single-crystalline domains. These results are even greater than those for MoS2 grown using 1-2 orders of magnitude longer deposition time and higher temperatures. This study highlights the opportunities for low-cost high-throughput production of large-area high-quality monolayer MoS2 .