霍尔效应
凝聚态物理
物理
散射
电阻率和电导率
杂质
材料科学
结晶学
化学
量子力学
作者
Hiroki Hayashi,Akio Asami,K. Ando
出处
期刊:Physical review
日期:2019-12-16
卷期号:100 (21)
被引量:10
标识
DOI:10.1103/physrevb.100.214415
摘要
We study the anomalous Hall effect at a ${\mathrm{PtO}}_{x}/\mathrm{Co}$ interface. We extracted the intrinsic and extrinsic contributions to the anomalous Hall effect in ${\mathrm{SiO}}_{2}/\mathrm{Co}/{\mathrm{SiO}}_{2}$ and ${\mathrm{PtO}}_{x}/\mathrm{Co}/{\mathrm{SiO}}_{2}$ films by measuring temperature dependence of the anomalous Hall resistivity. The result shows that the intrinsic anomalous Hall effect in the ${\mathrm{PtO}}_{x}/\mathrm{Co}/{\mathrm{SiO}}_{2}$ film is almost identical to that in the ${\mathrm{SiO}}_{2}/\mathrm{Co}/{\mathrm{SiO}}_{2}$ film. In contrast, the extrinsic anomalous Hall effect is clearly different between the ${\mathrm{SiO}}_{2}/\mathrm{Co}/{\mathrm{SiO}}_{2}$ and ${\mathrm{PtO}}_{x}/\mathrm{Co}/{\mathrm{SiO}}_{2}$ films. The anomalous Hall effect for various Co-layer thicknesses $t$ at various temperatures reveals that the extrinsic anomalous Hall resistivity shows a ${t}^{\ensuremath{-}1}$ dependence in the ${\mathrm{PtO}}_{x}/\mathrm{Co}/{\mathrm{SiO}}_{2}$ film, while it is almost independent of $t$ in the ${\mathrm{SiO}}_{2}/\mathrm{Co}/{\mathrm{SiO}}_{2}$ film. This result demonstrates the extrinsic anomalous Hall effect originating from the ${\mathrm{PtO}}_{x}/\mathrm{Co}$ interface. Our results show that both the side-jump and skew-scattering mechanisms contribute to the interfacial anomalous Hall effect, which can be attributed to the formation of Co-O bonds and electron scattering by Pt impurities at the ${\mathrm{PtO}}_{x}/\mathrm{Co}$ interface.
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