3.3 kV/ 450 a SiC MOSFET Module - Modelling and Experiments

The paper presents simulation and experimental study focused on performance of a 3.3-kV/450-A SiC half-bridge MOSFET module. At first, series of tests were conducted with the use of single- and double-pulse procedures to determine dynamic parameters of the module. The turn-on process takes around 1,2μs and SiC MOSFETs dissipates 396 mJ when switching at 1800V/450A, while 130 mJ is dissipated during the turn-off process. Afterwards, a simulation model in Saber was developed on the base of manufacturer's preliminary data and adjusted in reference to results of experiments. Then, this model was applied to perform simulations of the module operating in a square-wave-controlled half-bridge inverter. Again, the simulation model was compared to the experimental model of the half-bridge with inductive load. However, the model developed in the Saber MOSFET Tool does not perfectly match to the SiC MOSFETs included into the tested module, obtained results are suitable to perform further simulations of power electronic converters.