Effect of Annealing Temperature on Silver Doped Titanium Dioxide (Ag/TiO<sub>2</sub>) Thin Film via Sol-Gel Method

This study is conducted to investigate the effect of different annealing temperature on the growth of Silver doped Titanium Dioxide (AgTiO 2 ) nanocrystalline thin films.AgTiO 2 nanocrystalline thin films on silicon wafer have been prepared by sol–gel spin coating. The thin films were characterized for surface morphology and phase analysis by Scanning Electron Microscope (SEM) and X-ray diffraction (XRD. The films prepared by titanium tetraisopropoxide (TTIP) as the precursor under pH of 3.5 ± 0.5 and with annealing temperature of 300, 400, 500 and 600°C for 2h soaking time. X-Ray diffraction shows that only Ag/TiO 2 thin film annealed at 600°C have anatase TiO 2 phase. From SEM micrograph, there are cracks and pulled out thin film from the substrate, which were gradually minimize as the annealing temperature increase.