直接结合
阳极连接
微电子
晶片键合
材料科学
微技术
硅
引线键合
共金键结
纳米技术
互连
光电子学
薄脆饼
计算机科学
冶金
电气工程
工程类
共晶体系
微观结构
炸薯条
计算机网络
作者
Frank Fournel,H. Moriceau,Vincent Larrey,Christophe Morales,C. Mauguen,Claudine Bridoux,F. Rieutord
标识
DOI:10.1109/iitc.2018.8430293
摘要
Nowadays Silicon direct wafer bonding is a mass production technology in many different applications. Starting around the sixties for industrial optical system elaboration, its major development is now in the microelectronic, microtechnology and optoelectronic fields. Obviously to reach such a mature level, the direct bonding mechanisms have to be established. The silicon or silicon dioxide direct bonding is now well established and direct bonding using metallic surfaces starts also to be investigated. For instance, copper or titanium direct bonding mechanism are established. The behavior of hybrid direct bonding using surfaces composed of both materials can then be understood. This hybrid bonding paves the way to high-density interconnection bonding for 3D applications.
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