电子迁移率
感应高电子迁移率晶体管
载流子
场效应晶体管
有机半导体
电荷(物理)
晶体管
材料科学
场效应
半导体
凝聚态物理
绝缘体(电)
光电子学
场依赖性
电荷密度
饱和速度
化学物理
化学
物理
电压
磁场
量子力学
作者
C. Tanase,E. J. Meijer,Paul W. M. Blom,Dago M. de Leeuw
标识
DOI:10.1016/s1566-1199(03)00006-5
摘要
In conventional field-effect transistors, the extracted mobility does not take into account the distribution of charge carriers. However, in disordered organic field-effect transistors, the local charge carrier mobility decreases from the semiconductor/insulator interface into the bulk, due to its dependence on the charge carrier density. It is demonstrated that the conventional field-effect mobility is a good approximation for the local mobility of the charge carriers at the interface.
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