Raman spectra of GdS, GdSe, GdTe and LaTe: Phonon density of states in fcc metals

The Raman spectra of the fcc metals GdS, GdSe, GdTe and LaTe were measured. A defect induced first order scattering mechanism is dominant with the scattering spectra representing the one phonon density of states. Spin dependent Raman scattering was not found.