原子层沉积
等离子体
沉积(地质)
光谱学
图层(电子)
等离子体处理
材料科学
原子发射光谱法
过程(计算)
薄膜
分析化学(期刊)
化学
纳米技术
感应耦合等离子体
计算机科学
环境化学
操作系统
生物
物理
量子力学
古生物学
沉积物
作者
Adriaan J. M. Mackus,Sbs Stephan Heil,E Erik Langereis,Hcm Harm Knoops,van de Mcm Richard Sanden,Wmm Erwin Kessels
出处
期刊:Journal of vacuum science & technology
[American Vacuum Society]
日期:2010-01-01
卷期号:28 (1): 77-87
被引量:58
摘要
In this note it is demonstrated that optical emission spectroscopy (OES) is an easy-to-implement and valuable tool to study, optimize, and monitor thin film growth by plasma-assisted atomic layer deposition (ALD). The species in the plasma can be identified through the analysis of the light emitted by the plasma. OES provides therefore information on the reactant species delivered to the surface by the plasma but it also yields unique insight into the surface reaction products and, as a consequence, on the reaction mechanisms of the deposition process. Time-resolved measurements reveal information about the amount of precursor dosing and length of plasma exposure needed to saturate the self-limiting half reactions, which is useful for the optimization of the ALD process. Furthermore, time-resolved OES can also be used as an easy-to-implement process monitoring tool for plasma-assisted ALD processes on production equipment; for example, to monitor reactor wall conditions or to detect process faults in real time.
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