光电探测器
光电子学
材料科学
紫外线
近红外光谱
宽带
电压
活动层
量子效率
电子
红外线的
图层(电子)
光学
纳米技术
物理
薄膜晶体管
量子力学
作者
Fang‐Chung Chen,Shang Chieh Chien,Guan Lin Cious
摘要
Highly sensitive polymer photodetectors exhibiting broad spectral responses, ranging from the ultraviolet to the near-infrared (NIR) region, are obtained after incorporating an organic NIR dye into the device active layer. As a result, high external quantum efficiencies (>7000%) and high responsivities (32.4 A/W) are achieved at an extremely low operating voltage (−1.5 V). The high photomultiplation could be attribute to trapping of electrons, originating from the photogenerated electron/hole pairs, at the dye molecules, which effectively facilitates hole injection from the external circuit. The device preparation scheme presented herein opens up the possibility fabricating lost-cost, flexible organic photodetectors.
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