过饱和度
化学气相沉积
单层
材料科学
气相
过程(计算)
相(物质)
进程窗口
纳米技术
光电子学
计算机科学
化学
热力学
物理
有机化学
平版印刷术
操作系统
作者
Vikram Kumar,Shanta Dhar,Tanushree H. Choudhury,S. A. Shivashankar,Srinivasan Raghavan
出处
期刊:Nanoscale
[The Royal Society of Chemistry]
日期:2015-01-01
卷期号:7 (17): 7802-7810
被引量:127
摘要
A generic approach suitable to all TMDs has been demonstrated. Thermodynamic modeling identifies the appropriate CVD process window and the growth is controlled by tuning the vapor phase supersaturation. Consequently MoS2 growth, bulk to monolayers, has been achieved.
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